JinkoSolar has filed a patent for a new photovoltaic cell design. The cell includes multiple layers, including silicon oxynitride and silicon nitride layers, as well as a second passivation layer with aluminum oxide. The patent claims that this design improves the efficiency and performance of the photovoltaic cell. GlobalData’s report on JinkoSolar gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on JinkoSolar, Artificial photosynthesis was a key innovation area identified from patents. JinkoSolar's grant share as of September 2023 was 58%. Grant share is based on the ratio of number of grants to total number of patents.
The patent filed is for a photovoltaic cell with specific layers
A recently filed patent (Publication Number: US20230317863A1) describes a new design for a photovoltaic cell and module. The photovoltaic cell includes a silicon substrate with a first passivation layer on the front surface and a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer on the rear surface. The second passivation layer consists of a first silicon oxide layer and at least one aluminum oxide layer, with a specific ratio of oxide atoms to aluminum atoms and a thickness range of 4 nm to 20 nm. The silicon oxynitride layer has a higher number of oxygen atoms than nitrogen atoms, and a thickness range of 1 nm to 30 nm. The silicon nitride layer has a ratio of silicon atoms to nitrogen atoms between 1 and 4, and a thickness range of 50 nm to 100 nm.
The patent also describes a photovoltaic module that includes multiple cell strings, with each cell string consisting of several of the described photovoltaic cells. The design of the photovoltaic cells in the module is the same as described above, with the addition of an emitter layer between the first passivation layer and the silicon substrate. The module also includes a first silicon oxide layer between the substrate and the aluminum oxide layer, with a thickness range of 0.1 nm to 5 nm.
The refractive index of the aluminum oxide layer is in the range of 1.4 to 1.6, the refractive index of the silicon oxynitride layer is in the range of 1.5 to 1.8, and the refractive index of the silicon nitride layer is in the range of 1.9 to 2.5. The silicon nitride layer can have 2 to 5 silicon nitride layers. The gas flow ratios for the precursors used to form the aluminum oxide layer, silicon oxynitride layer, and silicon nitride layer are also specified in the patent.
Overall, this patent describes a novel design for photovoltaic cells and modules that includes specific layers and thickness ranges to enhance their performance. The use of different passivation layers and precise ratios of atoms in the layers can improve the efficiency and durability of the photovoltaic cells. This innovation has the potential to contribute to the advancement of solar energy technology.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
