Ideal Power has been granted a patent for a semiconductor device with innovative power semiconductor devices featuring breakdown initiation regions on both sides of a die, located inside emitter/collector regions but laterally spaced away from insulated trenches. This technology is part of a symmetrically-bidirectional power device known as the “B-TRAN.” GlobalData’s report on Ideal Power gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Ideal Power, Smart energy mgmt systems was a key innovation area identified from patents. Ideal Power's grant share as of May 2024 was 33%. Grant share is based on the ratio of number of grants to total number of patents.
Semiconductor device with breakdown initiation regions inside emitter/collector regions
A recently granted patent (Publication Number: US11978788B2) discloses a semiconductor device featuring a unique structure on both surfaces of a first-conductivity-type semiconductor die. The device includes an emitter/collector region of second-conductivity-type, surrounded by an insulated trench, a base contact region, and a breakdown initiation region with specific dopant atoms. This breakdown initiation region plays a crucial role in determining the breakdown voltage between the emitter/collector and the base region, with the second breakdown voltage being lower than the first breakdown voltage. The patent also details various configurations and features of the semiconductor device, such as the material used (silicon), the depth of the breakdown initiation region, and the presence of multiple trench segments to reduce breakdown voltage locally.
Furthermore, the patent extends to a bidirectional bipolar power transistor, which includes upper and lower emitter/collector regions, base contact regions, and breakdown initiation regions with specific dopant atoms. The breakdown voltage between the emitter/collector and the base region is carefully controlled in both the upper and lower regions, with the second breakdown voltage being lower than the first breakdown voltage. The bidirectional bipolar power transistor is designed to operate at high breakdown voltages, exceeding 1000V, and is suitable for various power applications. The patent also highlights the use of silicon as the semiconductor die material and the impact of the breakdown initiation region on the junction depth of the emitter/collector region. Overall, the patent showcases innovative semiconductor device and transistor designs aimed at improving performance and efficiency in power applications.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
