LONGi Green Energy Technology has been granted a patent for a method, apparatus, and device to detect the growth state of a crystalline line of a silicon rod. The innovation improves accuracy and efficiency by overcoming challenges related to fluctuating rod diameter and unclear features of the crystalline lines. GlobalData’s report on LONGi Green Energy Technology gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on LONGi Green Energy Technology, Artificial photosynthesis was a key innovation area identified from patents. LONGi Green Energy Technology's grant share as of May 2024 was 62%. Grant share is based on the ratio of number of grants to total number of patents.
Method for detecting growth state of silicon rod crystalline line
A recently granted patent (Publication Number: US12002234B2) discloses a method for detecting the growth state of a crystalline line of a silicon rod. The method involves acquiring a sample image of the silicon rod during constant-diameter growth, defining a detection area overlapping with the crystalline-line growth line, generating a grayscale-value curve of the detection area, and determining the growth state based on this curve. The detection area can be a line segment or a rectangular area perpendicular to the axial direction of the silicon rod, with specific steps outlined for generating the grayscale-value curve for each type of detection area.
Furthermore, the method includes determining the growth state based on the variance value of the grayscale values in the curve. If the variance value exceeds a threshold, the growth state is classified as continued, while a variance value below the threshold indicates a line-breaking state. Additionally, the presence or absence of a crystalline-line characteristic peak in the grayscale-value curve is used to differentiate between continued and line-breaking states. The method also incorporates image-enhancement processing using a predetermined algorithm after acquiring the sample image of the silicon rod, enhancing the quality of the image for more accurate detection of the crystalline line's growth state.
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